r07ds1001ej0100 rev.1.00 page 1 of 6 jan 22, 2013 preliminary datasheet RJP60F7DPK 600v - 50a - igbt high speed power switching features ? low collector to emitter saturation voltage v ce(sat) = 1.35 v typ. (at i c = 50 a, v ge = 15 v, ta = 25c) ? trench gate and thin wafer technology ? high speed switching t f = 74 ns typ. (at i c = 30 a, v ce = 400 v, v ge = 15 v, rg = 5 ? , ta = 25c, inductive load) outline 1. gate 2. collecto r 3. emitter 4. collecto r c g e renesas package code: prss0004ze-a (package name: to-3p) 1 2 3 4 absolute maximum ratings (tc = 25c) item symbol ratings unit collector to emitter voltage v ces 600 v gate to emitter voltage v ges 30 v tc = 25c i c 90 a collector current tc = 100c i c 50 a collector peak current ic(peak) note1 180 a collector dissipation p c 328.9 w junction to case thermal impedance (igbt) ? j-c 0.38 c/w junction temperature tj 150 c storage temperature tstg ?55 to +150 c notes: 1. pulse width limited by safe operating area. r07ds1001ej0100 rev.1.00 jan 22, 2013
RJP60F7DPK preliminary r07ds1001ej0100 rev.1.00 page 2 of 6 jan 22, 2013 electrical characteristics (tj = 25c) item symbol min typ max unit test conditions zero gate voltage collector current i ces ? ? 100 ? a v ce = 600v, v ge = 0 gate to emitter leak current i ges ? ? 1 ? a v ge = 30 v, v ce = 0 gate to emitter cutoff voltage v ge(off) 4 ? 8 v v ce = 10v, i c = 1 ma v ce(sat) ? 1.35 1.75 v i c = 50 a, v ge = 15v note2 collector to emitte r saturation voltage v ce(sat) ? 1.6 ? v i c = 90 a, v ge = 15v note2 input capacitance cies ? 4700 ? pf output capacitance coes ? 198 ? pf reverse transfer capacitance cres ? 83 ? pf v ce = 25 v v ge = 0 v f = 1 mhz t d(on) ? 63 ? ns t r ? 81 ? ns t d(off) ? 142 ? ns switching time t f ? 74 ? ns i c = 30 a, v ce = 400 v, v ge = 15 v rg = 5 ?? note2 inductive load notes: 2. pulse test
RJP60F7DPK preliminary r07ds1001ej0100 rev.1.00 page 3 of 6 jan 22, 2013 main characteristics collector to emitter saturation v oltage vs. junction t emparature ( typical) collector to emitter saturation v oltage v ce(sat) (v) junction t emparature tj ( c) typi cal output characteristics 160 120 80 40 12345 collector current i c (a) 0 0 0 collector to emitter v oltage v ce (v) collector current i c (a) collector to emitter v oltage v ce (v) pulse t est t a = 25 c 160 120 80 40 pulse t est t a = 25 c 9.8 v v ge = 8 v 8.2 v 8.4 v 8.6 v 8.8 v 9.2 v 9.4 v 9 v 15 v 10 v collector to emitter saturation v oltage vs. gate to emitter v oltage ( typical) collector to emitter saturation v oltage v ce(sat) (v) typi cal t ransf er characteristics collector current i c (a) 02468 10 v ce = 10 v pulse test gate to emitter v oltage v ge (v) 25c ?25c t c = 75c 9.6 v gate to emitter cuto ff v oltage vs. junction t emparature ( typical) gate to emitter cuto ff v oltage v ge(off) (v) junction t emparature tj ( c) maximum safe operation area 1000 100 1 10 0.1 1 100 10 1000 tc = 25c single pulse 100 pw = 10 0 2 1 3 5 4 7 6 68 10 12 20 16 18 14 50 a 90 a i c = 20 a pulse t est t a = 25 c 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ?25 02 575 125 5 0 100 150 v ge = 15 v pulse test 50 a 20 a i c = 90 a 2 3 5 7 4 6 8 ?25 02 575 125 5 0 100 150 v ce = 10 v pulse test 1 ma i c = 10 ma gate to emitter v oltage v ge (v)
RJP60F7DPK preliminary r07ds1001ej0100 rev.1.00 page 4 of 6 jan 22, 2013 capacitance c (pf) 10 100 1000 10000 0 100 501 5 0 200 250 300 cies coes cres gate charge qg (nc) dynamic input character istics ( typi cal) typi cal capacitance vs. collector to emitter v oltage 800 600 400 200 0 0 16 12 8 4 0 40 8 0 120 160 200 i c = 50 a ta = 25 c v ge v ce v cc = 600 v 300 v v cc = 600 v 300 v v ge = 0 v f = 1 mhz ta = 25 c collector to emitter v oltage v ce (v) collector to emitter v oltage v ce (v) gate to emitter v oltage v ge (v) 0 5 025 150 75 125 100 0 5 025 150 75 125 100 800 400 1600 1200 0 120 80 40 200 160 0 switching character istics ( typi cal) (3) 100 1000 10 t d(off) t d(on) t f t r junction t emperature tj (c) (inductive load) junction t emperature tj (c) (inductive load) switching characteristics ( typi cal) (4) eoff eon swithing energy losses e () switching ti mes t (n s) 11 0 2 0 0 100 110 200 100 10 1000 100 100000 10000 swithing energy losses e () collector current i c (a) (inductive load) eoff eon switching characteristics ( typi cal) (1) switching characteristics ( typi cal) (2) collector current i c (a) (inductive load) switching ti mes t (n s) v cc = 400 v, v ge = 15 v rg = 5 150 c t r includes the diode recovery v cc = 400 v, v ge = 15 v rg = 5 150 c eon includes the diode recovery v cc = 400 v, v ge = 15 v i c = 30 a, rg = 5 on includes the diode recovery v cc = 400 v, v ge = 15 v i c = 30 a, rg = 5 t r includes the diode recovery t d(off) t d(on) t f t r
RJP60F7DPK preliminary r07ds1001ej0100 rev.1.00 page 5 of 6 jan 22, 2013 pulse width pw (s) normalized transient thermal impedance (t) normalized transient thermal impedance vs. pulse width 0.01 0.1 10 1 10 100 1 m10 m 100 m1 10 p dm pw t d = pw t c(t) = (t) ? c c = 0.38c/w, tc = 25c tc = 25c 0.05 0.2 0.1 0.5 d = 1 0.02 0.01 1 shot pulse switching time test circuit waveform t d(off) t off t on t d(on) t f t r t tail 90% 90% 90% 10% 10% 10% 10% 1% v ge i c v ce rju60c3tdpp d.u.t rg l v cc
RJP60F7DPK preliminary r07ds1001ej0100 rev.1.00 page 6 of 6 jan 22, 2013 package dimensions 8 0.2 1.5 0.3 2.8 0.6 0.2 1.0 0.2 18.0 0.5 19.9 0.2 15.6 0.3 0.5 1.0 5.0 0.3 1.6 1.4 max 2.0 2.0 14.9 0.2 3.6 0.9 1.0 5.45 0.5 5.45 0.5 previous code prss0004ze-a to-3p / to-3p v mass[typ.] 5.0g package name to-3p sc-65 renesas code jeita package code unit: mm ordering information orderable part number quan tity shipping container RJP60F7DPK-00#t0 30 pcs tube
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